r07ds0731ej0300 rev.3.00 page 1 of 7 oct 12, 2012 preliminary datasheet rjk60s3dpd 600v - 12a - sj mos fet high speed power switching features ? superjunction mosfet ? low on-resistance r ds(on) = 0.35 ? typ. (at i d = 6 a, v gs = 10 v, ta = 25 ? c) ? high speed switching t f = 21 ns typ. (at i d = 6 a, v gs = 10 v, r l = 50 ? , rg = 10 ? , ta = 25 ? c) outline renesas package code: prss0004zg-a ( package name : mp-3a) 1 1. gate 2. drain 3. source 4. drain 3 2 4 d s g absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 600 v gate to source voltage v gss +30, ? 20 v tc = 25 ?c i d note1,2 12.0 a drain current tc = 100 ?c i d note1,2 7.6 a drain peak current i d (pulse) note1 24 a body-drain diode reverse drain current i dr note1 12 a body-drain diode reverse drain peak current i dr (pulse) note1 24 a avalanche current i ap note3 3 a avalanche energy e ar note3 0.49 mj channel dissipation pch note4 73.5 w channel to case thermal impedance ? ch-c 1.7 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. limited by tch max. 2. maximum duty cycle d = 0.75. 3. stch = 25 ? c, tch ? 150 ?c 4. value at tc = 25 ?c r07ds0731ej0300 rev.3.00 oct 12, 2012
rjk60s3dpd preliminary r07ds0731ej0300 rev.3.00 page 2 of 7 oct 12, 2012 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 600 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 ma v ds = 600 v, v gs = 0 gate to source leak current i gss ? ? 0.1 ? a v gs = +30v, ? 20 v, v ds = 0 gate to source cutoff voltage v gs(off) 3 ? 5 v v ds = 10 v, i d = 1 ma r ds(on) ? 0.35 0.44 ? i d = 6 a, v gs = 10 v note5 static drain to source on state resistance r ds(on) ? 0.87 ? ? ta = 150c i d = 6 a, v gs = 10 v note5 gate resistance rg ? 2.5 ? ? f = 1 mhz v ds = 25 v, v gs = 0 input capacitance ciss ? 720 ? pf output capacitance coss ? 980 ? pf reverse transfer capacitance crss ? 3.7 ? pf v ds = 25 v v gs = 0 f = 100 khz turn-on delay time t d(on) ? 13 ? ns rise time t r ? 18 ? ns turn-off delay time t d(off) ? 25 ? ns fall time t f ? 18 ? ns i d = 6 a v gs = 10 v r l = 50 ? rg = 10 ? note5 total gate charge qg ? 13.6 ? nc gate to source charge qgs ? 4.8 ? nc gate to drain charge qgd ? 3.9 ? nc v dd = 480 v v gs = 10 v i d = 12 a note5 body-drain diode forward voltage v df ? 1.0 1.6 v i f = 12 a, v gs = 0 note5 body-drain diode reverse recovery time t rr ? 320 ? ns body-drain diode reverse recovery current i rr ? 20 ? a body-drain diode reverse recovery charge q rr ? 3.7 ? ? c i f = 12 a v gs = 0 di f /dt = 100 a/ ? s note5 notes: 5. pulse test
rjk60s3dpd preliminary r07ds0731ej0300 rev.3.00 page 3 of 7 oct 12, 2012 main characteristics 20 16 12 8 4 246810 drain to source voltage v ds (v) drain current i d (a) typical output characteristics 11 0 0 10 1 10 0.1 drain current i d (a) drain to source on state resistance r ds(on) () static drain to source on state resistance vs. drain current (typical) ta = 25c pulse test v gs = 5.5 v 6 v 7 v 6.5 v 0 0 40 30 20 10 0 2468 10 0 8 v 10 v 15 v gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 10 1 0.1 100 0.01 v ds = 10 v pulse test tc = 75c 25c ?25c 12 10 8 6 4 2 246810 drain to source voltage v ds (v) drain current i d (a) typical output characteristics ta = 125c pulse test v gs = 5 v 6 v 5.5 v 0 0 8 v 10 v 15 v 02550 100 75 125 150 175 channel dissipation pch (w) case temperature tc (c) channel dissipation vs. case temperature 7 v v gs = 10 v pulse test 25c ta = 125c drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 0.1 1 10 100 110100 1000 tc = 25c 1 shot operation in this area is limited by r ds(on) pw = 100 s 10 s 6.5 v
rjk60s3dpd preliminary r07ds0731ej0300 rev.3.00 page 4 of 7 oct 12, 2012 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) 800 16 600 12 400 8 200 0 4 0 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) 0481216 20 v gs v ds i d = 12 a ta = 25c v dd = 480 v 300 v 100 v v dd = 480 v 300 v 100 v 1000 100 10 1 10000 0 50 150100 300 250200 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 0.1 ta = 25c ciss coss crss v gs = 0, f = 100 khz reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) 11 01 0 0 1000 100 10 di/dt = 100 a/ s v gs = 0, ta = 25c 0 50 150 100 300 250200 e oss (j) drain to source voltage v ds (v) c oss stored energy (typical) 2.0 1.6 1.2 0.8 0.4 0 00.40.81.2 1.6 100 1 10 0.1 v gs = 0 pulse test 25c ta = 125c 1.6 1.2 0.8 0.4 0 case temperature tc (c) static drain to source on state resistance r ds(on) () static drain to source on state resistance vs. temperature (typical) ? 25 0 50 25 75 100 125 150 i d = 12 a 6 a 3 a v gs = 10 v pulse test
rjk60s3dpd preliminary r07ds0731ej0300 rev.3.00 page 5 of 7 oct 12, 2012 10 100 1 m 10 m 100 m 1 100 10 p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 1.7 c/w d = 1 0.5 0.2 0.1 0.05 0.02 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 10 1 0.01 0.1 0.01 1 shot pulse case temperature tc ( c) drain to source breakdown voltage vs. case temperature (typical) drain to source breakdown voltage v (br)dss (v) 400 600 500 700 800 ? 25 0 50 25 75 100 125 150 i d = 10 ma v gs = 0 0 2 1 3 4 5 6 ? 25 0 50 25 75 100 125 150 case temperature tc (c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) i d = 10 ma 0.1 ma 1 ma v ds = 10 v
rjk60s3dpd preliminary r07ds0731ej0300 rev.3.00 page 6 of 7 oct 12, 2012 vin monitor d.u.t. vin 10 v r l v dd = 300 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 10 90% 10% t f switching time test circuit waveform d. u. t 100 rg i ap monitor v ds monitor v dd vi n 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform
rjk60s3dpd preliminary r07ds0731ej0300 rev.3.00 page 7 of 7 oct 12, 2012 package dimension sc-63 0.32g mass[typ.] tmp3 prss0004zg-a renesas code jeita package code previous code unit: mm 10.4max 1max 0.5 0.2 0.1 0.1 0.5 0.2 0.76 0.76 0.2 2.3 0.2 5.3 0.2 6.6 1.4 0.2 6.1 0.2 1 0.2 2.3 2.5min 2.3 1 package name mp-3a ordering information orderable part no. quantity shipping container rjk60s3dpd-00#j2 3000 pcs taping
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